PART |
Description |
Maker |
A43L8316V-7 |
128K X 16 Bit X 2 Banks Synchronous DRAM
|
AMIC Technology
|
A43L8316AV-7 A43L8316A A43L8316AV A43L8316AV-5 A43 |
128K X 16 Bit X 2 Banks Synchronous DRAM
|
AMICC[AMIC Technology]
|
A43L8316V-10 A43L8316V-8 |
128K X 16 Bit X 2 Banks Synchronous DRAM
|
AMIC Technology
|
A43L8316AV-5.5 AMICTECHNOLOGYCORPORATION-A43L8316A |
128K X 16 Bit X 2 Banks Synchronous DRAM 128K的16位2银行同步DRAM
|
AMIC Technology Corporation AMIC Technology, Corp.
|
KM4132G271BTQR-8 KM4132G271BQR-8 KM4132G271BTQR-10 |
128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL
|
Samsung semiconductor
|
CAT25C128XA-1.8-GT3 CAT25C128XA-GT3 CAT25C128XA-1. |
128K/256K-Bit SPI Serial CMOS EEPROM 128K/256K-Bit SPI串行EEPROM中的CMOS
|
ON Semiconductor Unisonic Technologies Co., Ltd. TDK, Corp. Atmel, Corp. Advanced Analog Technology, Inc. Silicon Storage Technology, Inc. Air Cost Control
|
AT49F2048 AT49F2048-12RC AT49F2048-12RI AT49F2048- |
2-Megabit 128K x 16 5-volt Only CMOS Flash Memory 128K X 16 FLASH 5V PROM, 120 ns, PDSO44 Serial-To-Parallel Interface 20-TSSOP -40 to 85 128K X 16 FLASH 5V PROM, 70 ns, PDSO44 Dual 16-Bit Binary Counters with 3-State Output Registers 20-PDIP -40 to 85
|
Atmel, Corp. Atmel Corp. ATMEL[ATMEL Corporation]
|
MX26C1000APC-90 MX26C1000ATC-10 MX26C1000AMC-10 MX |
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 EEPROM 12V, 90 ns, PDIP32 1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 EEPROM 12V, 100 ns, PDSO32 1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 EEPROM 12V, 70 ns, PQCC32 128K X 8 EEPROM 12V, 150 ns, PDSO32 128K X 8 EEPROM 12V, 150 ns, PQCC32
|
Macronix International Co., Ltd. MACRONIX INTERNATIONAL CO LTD
|
AS7C31025 AS7C31025-12JC AS7C31025-12JI AS7C31025- |
Parallel-Load 8-Bit Shift Registers 16-SSOP -40 to 85 High Speed CMOS Logic Quad 2-Input AND Gates 14-SOIC -55 to 125 5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 15 ns, PDSO32 5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 12 ns, PDSO32
|
ALLIANCE MEMORY INC ALSC[Alliance Semiconductor Corporation] ETC[ETC] Alliance Semiconductor, Corp.
|
MX26C1000BTC-10 MX26C1000BMC-10 MX26C1000BPC-10 MX |
Toggle Switch; Circuitry:DPDT; Switch Operation:On-Off-On; Contact Current Max:12A; Leaded Process Compatible:Yes Toggle Switch; Circuitry:SPDT; Switch Operation:On-On; Contact Current Max:12A; Leaded Process Compatible:Yes 128K X 8 FLASH 12V PROM, 150 ns, PDIP32 1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 FLASH 12V PROM, 90 ns, PDIP32 1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 FLASH 12V PROM, 90 ns, PQCC32 1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 FLASH 12V PROM, 90 ns, PDSO32 1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Macronix International Co., Ltd.
|
MT41J64M16JT MT41J128M8 MT41J256M4 MT41J64M16JT-12 |
DDR3 SDRAM MT41J256M4 ?32 Meg x 4 x 8 banks MT41J128M8 ?16 Meg x 8 x 8 banks MT41J64M16 ?8 Meg x 16 x 8 banks
|
Micron Technology
|